Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Feature
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONS
• Switching applications
| Categories | Mosfet Power Transistor |
| STL26N60DM6 |
| Transistor Polarity | N-Channel |
| Channel No. | 1 Channel |
| Leakage Source on-resistance | 215 mOhms |
| Qg-Gate Charge | 24 nC |
| Configure | Single |
| Continuous Leakage Current | 15A |
| Vds-Leakage Source Breakdown Voltage | 600V |
FAQ:
Q1. How about your lead time?
A: We can ship out within 1-3days after you confirmed the payment.
B: Customized product,we will ship out within our professional invoice show.
Q2. What is your sample policy?
A: Most of products,we can offer free samples,you just need pay the shipping cost. But it depends on different items, some need to be paid.
Q3: Can we ask support if get trouble?
Sure, if there is any quality problems or questions;we could offer technical support or return service .
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N Channel 175 MOhm Typ Mosfet Power Transistor SMD / SMT Installation HV Package Images
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